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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.20 No.5
- 발행연도
- 2020.10
- 수록면
- 474 - 478 (5page)
- DOI
- 10.5573/JSTS.2020.20.5.474
이용수
초록· 키워드
오류제보하기
In this paper, we introduce a method enabling faster and more innovative analysis of the channel characteristics of amorphous indium-gallium- zinc oxide (a-IGZO) thin film transistors (TFTs) manufactured on flexible substrates through electrical property analysis. The TFTs used in the present evaluation were a-IGZO TFTs with different oxygen flow rates (OFRs), which have been reported on frequently in the past, to confirm the effectiveness of the new evaluation method. The interface characteristics of the IGZO and the insulator were confirmed by density of state (DOS) extraction using photoexcited charge collection spectroscopy (PECCS). Defects of the TFT active layer were confirmed through the capacitance-time (c-t) method. It was confirmed that the smaller the OFR, the smaller the carrier lifetime due to the presence of oxygen vacancies. In conclusion, by obtaining the same results as previously reported physical analyses, the proposed electrical channel characteristics analysis of IGZO TFTs was shown to be a reliable analysis method.
목차
Abstract
I. INTRODUCTION
II. DEVICE STRUCTURE
III. RESULTS AND DISCUSSION
V. CONCLUSIONS
REFERENCES
참고문헌 (7)
참고문헌 신청
J. T. Jang, et al, “Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices,” Solid-State Electronics, Vol. 140, pp. 115-121, Feb., 2018.
Y. S. Kim, et al, “Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range,” IEEE Trans on Electron Device, Vol. 59, No. 10, pp. 2689-2698, Oct., 2012.
S. C. Kim, et al, “Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DCSputtered Amorphous InGaZnO,” IEEE Electron Device Letter, Vol. 33, No. 1, pp. 62-64, Jan., 2012.
J. S. Yoon, et al, “Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions,” Journal of Alloys and Compounds, Vol. 762, No. 25, pp. 456-462, Sep., 2018.
Eric kai-Hsiang Yu, et al, “photoluminescence study of Amorphous InGaZnO Thin-Film Transistors,” IEEE Trans on Electron Device, Vol. 65, No. 3, pp. 1258-1261, Mar., 2018.
Y. S. Kim, et al, “Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range,” IEEE Trans on Electron Device, Vol. 59, No. 10, pp. 2689-2698, Oct., 2012.
S. C. Kim, et al, “Impact of Oxygen Flow Rate on the Instability Under Positive Bias Stresses in DCSputtered Amorphous InGaZnO,” IEEE Electron Device Letter, Vol. 33, No. 1, pp. 62-64, Jan., 2012.
J. S. Yoon, et al, “Hybrid complementary inverter based on carbon nanotube and IGZO thin-film transistors with controlled process conditions,” Journal of Alloys and Compounds, Vol. 762, No. 25, pp. 456-462, Sep., 2018.
Eric kai-Hsiang Yu, et al, “photoluminescence study of Amorphous InGaZnO Thin-Film Transistors,” IEEE Trans on Electron Device, Vol. 65, No. 3, pp. 1258-1261, Mar., 2018.
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