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논문 기본 정보

자료유형
학술저널
저자정보
Chae-Eun Oh (Chung-Ang University) Hwan-Seok Jeong (Chung-Ang University) Su-Hyeon Lee (Chung-Ang University) Dong-Ho Lee (Chung-Ang University) Yeong-Gil Kim (Chung-Ang University) Myeong-Ho Kim (Samsung Display) Kyoung Seok Son (Samsung Display) Jun Hyung Lim (Samsung Display) Sang-Hun Song (Chung-Ang University) Hyuck-In Kwon (Chung-Ang University)
저널정보
대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.23 No.1
발행연도
2023.2
수록면
71 - 78 (8page)
DOI
10.5573/JSTS.2023.23.1.71

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초록· 키워드

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We study the effects of oxygen content in indium-gallium-zinc oxide (IGZO) thin films on the output characteristics of IGZO thin-film transistors (TFTs) under high current driving conditions. Output curves were characterized at a high gate-to-source voltage (= 40 V) from both oxygen-rich and oxygen-poor IGZO TFTs. Characterization results showed that the drain current (ID) decreased with an increase in the drain-to-source voltage (VDS) under high-VDS conditions in the oxygen-rich IGZO TFTs, but abruptly increased with VDS in the oxygen-poor IGZO TFTs. From the detailed analysis of the transfer and capacitance-voltage curves obtained after output curve characterization by varying the VDS sweep range, the abnormal behavior of the output curves was mainly attributed to the increased number of trapped electrons within the gate dielectric and that of the doubly ionized oxygen vacancies in IGZO during the output curve characterization at high VDSs in oxygen-rich and oxygen-poor IGZO TFTs, respectively. The abnormality of the output curve was more significant in a wider channel device in both TFTs, which was attributed to the increased device temperature due to the self-heating effects.

목차

Abstract
I. INTRODUCTION
II. EXPERIMENTAL DETAILS
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES

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