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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2019.1
- 수록면
- 171 - 178 (8page)
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Zinc-tin oxide (ZTO) thin-fi lms were prepared by applying a near-fi eld around the tip of electro-hydrodynamic (EHD) jetspray system and characterized. Oval shaped multi droplets were obtained by the near-fi eld assisted EHD (NF-EHD) jetspray. The optimized condition of an approximately 2.5 to 3 volts diff erence between the tip and near-fi eld enabled the oxidesemiconductor solution to spray properly. The electrical properties of ZTO thin-fi lm transistor showed a mobility of 2.96 cm 2 /Vs, an on-to-off ratio of 10 7 , a threshold voltage of 4.40 V, a subthreshold slope of 0.54 V/dec, and. Improved stability underbias stress and relaxation after stress were observed after applying a near-fi eld to the EHD jet spray system.
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