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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제23권 제3호
- 발행연도
- 2022.6
- 수록면
- 219 - 227 (9page)
- DOI
- https://doi.org/10.1007/s42341-021-00338-9
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With respect to semiconductor industry, Complementary metal oxide semiconductor is considered to be successful because of integration in Integrated Circuits (ICs). As transistor size is shrinked exponentially, there is an exponential increase in number of transistors on a chip. This potential of increase in number of transistors on chip is achieved by scaling of Metal oxide semiconductor fi eld eff ect transistor (MOSFET). With scaling, the characteristics of devices are also degraded. Several advanced MOSFETs like Multigate transistors (Double gate, triple gate, Gate all around), Junctionless transistors and Tunnel FETs are proposed recently. These are thought to aid Moore’s law and scaling of transistors to next decade and continue improvement in computer performance. This paper presents 2D ATLAS simulation of high- K gate dielectric engineered Double gate metal oxide fi eld effect transistor (DGMOSFET). The performance parameters for bulk MOSFET is poor as the transistors on integrated circuit is increasing. Therefore various challenges are invoked in nanometer scale. The new devices to control these challenges is needed and thus a non planar multigate structures are emerged. These structures have shown considerably better performance in nanometer scale. The surface potential for different dielectric materials for a fixed channel length and variation of surface potential for different channel lengths in a fi xed dielectric materials is shown. In similar way the electron concentration along the length of channel is shown. The IDS versus VDS graphs are also shown for different materials. The electrical characteristics of proposed device is shown in this paper. The proposed device has shown very good ION , IOFF and ION?IOFF ratio.
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