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논문 기본 정보

자료유형
학술저널
저자정보
Prateek Kumar (University of Delhi) Maneesha Gupta (Netaji Subhas Institute of Technology) Kunwar Singh (Netaji Subhas University of Technology) Naveen Kumar (Dr. B R Ambedkar National Institute of Technology)
저널정보
한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제23권 제2호
발행연도
2022.4
수록면
164 - 170 (7page)
DOI
https://doi.org/10.1007/s42341-021-00336-x

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Continuous failure of Metal oxide semiconductor field-effect transistors due to short channel effects has motivated researchers to find novel devices like tunnel field-effect transistors and junctionless transistors. The impractical nature of the analysed devices showed that the metal oxide semiconductor field-effect transistor is still the backbone of the industry. In this manuscript, a single transistor-based AND gate is analysed. For designing the gate, a split-gate metal oxide semiconductor field-effect-transistor is used. Due to the physical limitations of Silicon, MoTe2 is considered as the substrate material. To consider all the quantum effects, the Non-equilibrium Green’s function is used to solve the device behavior. The split-gate acts as the input for the designed AND logic structure. For state ‘01’ and ‘10’, different device properties are studied andit is shown that proper conduction does not take place when either of the gates is in OFF-state. For state ‘11’, the analysed device operates as conventional MOSFET, and the drain current?gate voltage characteristics are studied. To investigate the device thoroughly, the effect of parameter variation on device characteristics is examined. The device behavior as an AND gate is confi rmed by checking the linearity parameters. It is found that the device can be used as an AND gate with low noise and power dissipation.

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