Effects of electronic energy deposition on pre-existing defects in 6H ? SiC

Wenlong Liao; Huan He; Yang Li; Wenbo Liu; Hang Zang; Jianan Wei; Chaohui He

doi:https://doi.org/10.1016/j.net.2021.01.017

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자료유형: 학술저널

저자정보: Wenlong Liao (School of Nuclear Science and Technology, Xi’an Jiaotong University) Huan He (School of Nuclear Science and Technology, Xi’an Jiaotong University) Yang Li (School of Nuclear Science and Technology, Xi’an Jiaotong University) Wenbo Liu (School of Nuclear Science and Technology, Xi’an Jiaotong University) Hang Zang (School of Nuclear Science and Technology, Xi’an Jiaotong University) Jianan Wei (School of Nuclear Science and Technology, Xi’an Jiaotong University) Chaohui He (School of Nuclear Science and Technology, Xi’an Jiaotong University)

저널정보: 한국원자력학회 Nuclear Engineering and Technology Nuclear Engineering and Technology 제53권 제7호

발행연도: 2021.7

수록면: 2,357 - 2,363 (7page)

DOI: https://doi.org/10.1016/j.net.2021.01.017

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Silicon carbide is widely used in radiation environments due to its excellent properties. However, whenexposed to the strong radiation environment constantly, plenty of defects are generated, thus causing thematerial performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is usedto explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damagedsystem. The effects of defect concentration and the applied electronic energy loss on the defect recoveryprocess are investigated, respectively. The results demonstrate that almost no defect recovery takesplace until the defect density in the damage region or the local defect density is large enough, and theprobability of defect recovery increases with the defect concentration. Additionally, the results indicatethat the defect recovery induced by swift heavy ions is mainly connected with the homogeneousrecombination of the carbon defects, while the probability of heterogeneous recombination is mainlydependent on the silicon defects.

#2T-MD model #Defect recovery #Electronic energy loss #6HeSiC

참고문헌 (44)

참고문헌 신청

S. J. Zinkle / 1996 / Influence of irradiation spectrum and implanted ions on the amorphization of ceramics / Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms 116(1-4):92~101

C. H. Park / 1994 / Structural and electronic properties of cubic, 2H, 4H, and 6H SiC / Phys. Rev. B 49(7):4485

P. Fenici / 1998 / Current status of SiC/SiC composites R & D / J. Nucl. Mater 258:215~225

R. A. Verrall / 1999 / Silicon carbide as an inert-matrix for a thermal reactor fuel / J. Nucl. Mater 274(1-2):54~60

W. Jiang / 1998 / Damage accumulation and annealing in 6H-SiC irradiated with Siþ / Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms 143(3):333~341

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