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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제22권 제5호
- 발행연도
- 2021.10
- 수록면
- 711 - 716 (6page)
- DOI
- https://doi.org/10.1007/s42341-021-00288-2
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초록· 키워드
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The temperature dependence of the electrical characteristics and parameters of a thin fi lm transistor based on polycrystalline zinc oxide (pc-ZnO TFT) is numerically clarifi ed. The drain current as a function the gate voltage (transfer characteristics), of the pc-ZnO TFT is simulated for temperatures ranging from 300 to 400 K. The transfer characteristics, the drain current versus gate voltage, were fi rst computed. The threshold voltage and the electric field mobility were then extracted from these transfer characteristics. The drain current shows Arrhenius-type dependence with temperature. The activation energy varies almost linearly from 0.57 eV at V GS = 2 V to 0.019 eV at V GS = 26 V then goes up to 0.071 eV at V GS = 40 V. This means that this dependence is very strong in the sub-threshold regime while it is inactivated beyond threshold voltage. The threshold voltage and the electric fi eld mobility were also found to be thermally activated. This temperature dependence may be attributed to the contribution of the density of states to the channel electrons in the sub-threshold region or to speed accumulation of electrons at the pc ZnO/SiO 2 interface. However, the contribution of this density of states beyond threshold voltage is negligible. Furthermore, the threshold voltage was found to be proportional to the electric field mobility.
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참고문헌 (18)
참고문헌 신청
E. Fortunato / 2005 / Recent advances in ZnO transparent thin fi lm transistors / Thin Solid Films 487(1?2):205~211
K. Kandpal / 2018 / Perspective of zinc oxide based thin fi lm transistors : a comprehensive review / Microelectron. Int 35(1):52~63
S. Oh / 2019 / Performance improvements of ZnO thin fi lm transistors with reduced graphene oxide-embedded channel layers / J. Alloys Compd 777:1367~1374
R. A. Street / 2009 / Thin-fi lm transistors / Adv. Mater 21(20):2007~2022
Z. Yu-Ming / 2009 / Simulation of grain boundary eff ect on characteristics of ZnO thin fi lm transistor by considering the location and orientation of grain boundary / Chin. Phys. B 18(9):3966~3969
K. Kandpal / 2018 / Perspective of zinc oxide based thin fi lm transistors : a comprehensive review / Microelectron. Int 35(1):52~63
S. Oh / 2019 / Performance improvements of ZnO thin fi lm transistors with reduced graphene oxide-embedded channel layers / J. Alloys Compd 777:1367~1374
R. A. Street / 2009 / Thin-fi lm transistors / Adv. Mater 21(20):2007~2022
Z. Yu-Ming / 2009 / Simulation of grain boundary eff ect on characteristics of ZnO thin fi lm transistor by considering the location and orientation of grain boundary / Chin. Phys. B 18(9):3966~3969
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