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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.32 No.2
- 발행연도
- 2023.3
- 수록면
- 34 - 37 (4page)
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Among the next-generation semiconductor manufacturing processes, plasma-assisted atomic layer etching (ALE) has garnered significant attention along with an increase in demand for damage-free and precise process technology. In typical ALE, an atomic layer is etched in each cycle by repeating a modification step through a chemical reaction using a reactive gas and a removal step through physical etching. Polymer-rich fluorocarbon gases, such as C₄F<SUB>8</SUB> and C₄F<SUB>6</SUB>, are generally used as reactive gases for ALE to protect the sidewalls of high-aspect-ratio patterns. Compared with C₄F<SUB>8</SUB>, C₄F<SUB>6</SUB> has a lower global warming potential and an excellent etch selectivity, thus, it can be a candidate for next-generation etching gas. Among the plasma sources for ALE, inductively coupled plasma (ICP) is widely used because of its low plasma potential and low electron temperature. Moreover, the ion energy and electron density in an ICP can be independently controlled using an additional bias system. In ALE performed using a radiofrequency (RF)-biased ICP, the plasma characteristics change in each step, because the reactive gas is injected and purged in the modification step, and a bias is applied in the removal step. Hence, an ALE process design or a recipe tuning based on an understanding of the plasma characteristics in each step is required for precisely controlling the process. This review introduces and discusses ALE process and plasma characteristics using RF-biased ICP and C₄F<SUB>6</SUB> (Hexafluoro-1,3-butadiene).
목차
ABSTRACT
1. Introduction
2. Discharge characteristics in the ALE steps
3. ALE results based on plasma characteristics
4. Conclusions
References
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