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논문 기본 정보

자료유형
학술저널
저자정보
Yunki Kim (Sungkyunkwan University) Kyu-Jin Jo (Sungkyunkwan University) Jin-Su Oh (Sungkyunkwan University) Cheol-Woong Yang (Sungkyunkwan University)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.20 No.1
발행연도
2024.1
수록면
26 - 32 (7page)
DOI
https://doi.org/10.1007/s13391-023-00440-5

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초록· 키워드

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In this study, a resistive random-access memory device based on a Ta/Ta x Mn y O z /Pt metal–insulator–metal structure wasfabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance ofmore than 300 cycles and robust retention up to 10 4 s at room temperature. Moreover, the device had a low forming voltageand a resistance window of ~ 10 3 . The conduction mechanism in each resistance state of the device was analyzed throughcurrent–voltage curve fi tting. It was confi rmed that the primary conduction mechanisms were ohmic and Poole–Frenkelconduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device throughtransmission electron microscopy, it was found that the Ta x Mn y O z layer was deposited in amorphous form. The compositionand chemical bonding state of the Ta x Mn y O z layer were also analyzed using X-ray photoelectron spectroscopy. With thesecharacteristics, the amorphous Ta x Mn y O z layer has strong potential for nonvolatile memory applications.

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