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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학위논문
- 저자정보
- 지도교수
- 심광보
- 발행연도
- 2015
- 저작권
- 한양대학교 논문은 저작권에 의해 보호받습니다.
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향후 급속히 확대될 전망인 실내외 LED 조명 및 자동차 헤드램프 시장에 따라서 GaN 기판을 기반으로 한 고효율 LED 수요급증에 따른 시장 재편에 대비하여 선진 해외기술에 경쟁력 있게 대응할 수 있도록 GaN 단결정의 연구개발이 활발히 진행되고 있다. 특히, GaN은 기존에 LED 기판소재로 사용되는 사파이어가 가진 여러 단점들을 극복할만한 소재로 각광받고 있다.
본 연구에서는 자체 제작한 수소화합물 기상 적층법 성장장치 HVPE (hydride vapor phase epitaxy)를 사용하여 sapphire 기판 위에 두께 약 4 mm의 bulk GaN 단결정을 성장하였고, 다양한 특성평가 방법을 도입하여 품질을 평가하였다. 성장된 GaN의 구조분석은 XRD (X-ray diffraction)을 이용하여 실시하였고, HR-XRD (high resolution X-ray diffraction)을 이용하여 그 반치폭과 곡률반경을 측정하였다. 또한 화학습식에칭법 (wet chemical etching)을 사용하여 EPD (etch pit density)를 측정하였고, 측정 시 최적조건을 확립하였다. Raman spectroscopy를 활용하여 열팽창계수의 차에 의하여 발생하는 잔류 열응력과 잔류 열변형율에 관하여 평가하였다.
본 연구에서는 자체 제작한 수소화합물 기상 적층법 성장장치 HVPE (hydride vapor phase epitaxy)를 사용하여 sapphire 기판 위에 두께 약 4 mm의 bulk GaN 단결정을 성장하였고, 다양한 특성평가 방법을 도입하여 품질을 평가하였다. 성장된 GaN의 구조분석은 XRD (X-ray diffraction)을 이용하여 실시하였고, HR-XRD (high resolution X-ray diffraction)을 이용하여 그 반치폭과 곡률반경을 측정하였다. 또한 화학습식에칭법 (wet chemical etching)을 사용하여 EPD (etch pit density)를 측정하였고, 측정 시 최적조건을 확립하였다. Raman spectroscopy를 활용하여 열팽창계수의 차에 의하여 발생하는 잔류 열응력과 잔류 열변형율에 관하여 평가하였다.
목차
Chapter 1 서 론11.1 연구 배경 및 목적··················································1Chapter 2 이론적 배경42.1 GaN의 특성································································42.2 Bulk GaN의 성장··················································102.3 곡률반경······································································122.4 결정성평가······································································142.5 라만 산란 효과····························································18Chapter 3 실험방법213.1 Bulk GaN 단결정의 성장·········································213.2 GaN의 특성분석····················································243.2.1 GaN의 구조분석·················································243.2.2 곡률반경 측정····················································253.2.3 전위밀도의 측정·················································253.2.4 Raman spectroscopy··································27Chapter 4 결과 및 고찰284.1 Bulk GaN의 구조분석····················································284.2 Bulk GaN의 bowing······················································324.3 Bulk GaN의 결정성 분석···············································354.3.1 XRC (X-ray rocking curve)의 측정······················354.3.2 EPD (etch pit density)의 측정 및 최적조건 규명····374.4 잔류 열응력 및 변형···························42Chapter 5 결 론····························································51References·······························································52List of figures····························································59List of tables····························································62Abstract····································································63
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