메뉴 건너뛰기
.. 내서재 .. 알림
소속 기관/학교 인증
인증하면 논문, 학술자료 등을  무료로 열람할 수 있어요.
한국대학교, 누리자동차, 시립도서관 등 나의 기관을 확인해보세요
(국내 대학 90% 이상 구독 중)
로그인 회원가입 고객센터 ENG
주제분류

추천
검색
질문

논문 기본 정보

자료유형
학술저널
저자정보
저널정보
대한전기학회 Journal of Electrical Engineering & Technology Journal of Electrical Engineering & Technology Vol.1 No.1
발행연도
2006.3
수록면
110 - 113 (4page)

이용수

표지
📌
연구주제
📖
연구배경
🔬
연구방법
🏆
연구결과
AI에게 요청하기
추천
검색
질문

초록· 키워드

오류제보하기
A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 ㎾ unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of 10~50 ㎑ and 10~60%, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesiwn target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 ㎚ m/min at the average power of 1.5 ㎾. This result shows higher deposition rate than any other previous work involving reactive sputtering in oxide mode. The thickness uniformities over the entire substrate area of 982 ㎜×563 ㎜ were observed at the processing pressure of 2.8~9.5 mTorr. The thickness distribution was improved at lower pressure. This technique is proposed for application to a high through-put sputtering system for plasma display panels.

목차

Abstract
1. Introduction
2. Sputtering Equipment
3. Experiment
4. Results and discussion
5. Conclusion
Acknowledgements
References

참고문헌 (1)

참고문헌 신청

함께 읽어보면 좋을 논문

논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!

이 논문의 저자 정보

이 논문과 함께 이용한 논문

최근 본 자료

전체보기

댓글(0)

0

UCI(KEPA) : I410-ECN-0101-2009-560-019027767