지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2010.9
- 수록면
- 132 - 137 (6page)
이용수
초록· 키워드
오류제보하기
Plasma etching of SiO₂ contact holes was statistically analyzed by a fractional factorial experimental design. The analysis revealed the dependence of the etch rate and DC self-bias voltage on the input factors of the magnetically enhanced reactive ion etching reactor, including gas pressure, magnetic field, and the gas flow rates of CHF₃, CF₄, and Ar. Empirical models of the DC self-bias voltage and etch rate were obtained. The DC self-bias voltage was found to be determined mainly by the operating pressure and the magnetic field, and the etch rate was related mainly to the pressure and the flow rates of Ar and CHF₃.
목차
1. Introduction
2. Experimental Setup
3. DC Self-Bias Voltage Regression Model
4. Etch Rate Regression Model
5. Etch Profile Investigation
6. Conclusions
Acknowledgements
References
참고문헌 (27)
참고문헌 신청
1. [학술지(정기간행물)] - B. Wu / 2006 / / J. Vac. Sci. Technol. B 24 (1)
2. [학술지(정기간행물)] - B. Jinnai / 2007 / / J. Vac. Sci. Technol. B 25 (1808)
3. [학술지(정기간행물)] - M. A. Lieberman / 1991 / / IEEE Trans. Plasma Sci. 19 (189)
4. [학술지(정기간행물)] - J. C. Park / 1997 / / IEEE Trans. Plasma Sci. 25 (499)
5. [학술지(정기간행물)] - S. J. You / 2005 / / Surf. Coat. Tech. 193 (81)
2. [학술지(정기간행물)] - B. Jinnai / 2007 / / J. Vac. Sci. Technol. B 25 (1808)
3. [학술지(정기간행물)] - M. A. Lieberman / 1991 / / IEEE Trans. Plasma Sci. 19 (189)
4. [학술지(정기간행물)] - J. C. Park / 1997 / / IEEE Trans. Plasma Sci. 25 (499)
5. [학술지(정기간행물)] - S. J. You / 2005 / / Surf. Coat. Tech. 193 (81)
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UCI(KEPA) : I410-ECN-0101-2012-428-003678283