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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 저널정보
- 대한전자공학회 ITC-CSCC :International Technical Conference on Circuits Systems, Computers and Communications ITC-CSCC : 2008
- 발행연도
- 2008.7
- 수록면
- 1,665 - 1,668 (4page)
이용수
초록· 키워드
오류제보하기
The Trench Insulated Gate Bipolar Transistor (TIGBT) was invented for lower on-state voltage drop and higher integration due to smaller cell pitch, but TIGBTs suffer from breakdown voltage degradation due to the concentrated electric field at the corner of the trench gate in the forward blocking state. In this paper, we report on a new TIGBT structure that solve this problem.
The proposed structure has a deep P+ layer beneath the trench emitter to distribute the concentrated electric field at the trench gate corners in the forward blocking state. The deep P+ layer of the structure is formed by ion-implantation at the bottom of the trench after partial etching of the P-base region. The electrical characteristics of the proposed IGBT structure are verified by device simulation, namely, MEDICI and TSUPREM. The proposed structure improves the breakdown voltage compared to conventional TIGBTs without changing the threshold voltage and the on-state voltage drop. The distribution of the electric field is also changed by its design parameters. When the depth of the trench gate corner and the deep P+ layer are the same, the breakdown voltage is at the highest point. As the gap distance between the trench the gate corner and the deep P+ layer gets shorter, the breakdown voltage gets higher. The distribution effect operates when the doping level of the deep P+ layer exceeds the appropriate value to prevent punch-through between the metal electrode and the N-drift region.
This structure can be applied easily to various TIGBTs with simple processes addition.
The proposed structure has a deep P+ layer beneath the trench emitter to distribute the concentrated electric field at the trench gate corners in the forward blocking state. The deep P+ layer of the structure is formed by ion-implantation at the bottom of the trench after partial etching of the P-base region. The electrical characteristics of the proposed IGBT structure are verified by device simulation, namely, MEDICI and TSUPREM. The proposed structure improves the breakdown voltage compared to conventional TIGBTs without changing the threshold voltage and the on-state voltage drop. The distribution of the electric field is also changed by its design parameters. When the depth of the trench gate corner and the deep P+ layer are the same, the breakdown voltage is at the highest point. As the gap distance between the trench the gate corner and the deep P+ layer gets shorter, the breakdown voltage gets higher. The distribution effect operates when the doping level of the deep P+ layer exceeds the appropriate value to prevent punch-through between the metal electrode and the N-drift region.
This structure can be applied easily to various TIGBTs with simple processes addition.
목차
Abstract
1. INTRODUCTION
2. ANALYSIS OF THE PROPOSED STRUCTURE
3. CONCLUSION 2001
ACKNOWLEDGMENT
REFERENCES
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