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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.16 No.6
- 발행연도
- 2016.12
- 수록면
- 867 - 872 (6page)
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초록· 키워드
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We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with SiO<SUB>2</SUB> gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was 380 cm<SUP>2</SUP>/V·s near the threshold voltage. The effective channel mobility at the on-state bias condition was 115 cm<SUP>2</SUP>/V·s at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. DEVICE FABRICATION
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (18)
참고문헌 신청
U. K. Mishra / 2002 / AlGaN/GaN HEMTs-an overview of device operation and applications / Proceedings of the IEEE 90(6):1022~1031
J. -G. Lee / 2012 / State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates / Applied Physics Express 5(6):066502
S. -W. Han / 2014 / Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor / Applied Physics Express 7(11):111002
O. Ambacher / 2000 / Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures / Journal of Applied Physics 87(1):334~344
B. -R. Park / 2013 / High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs / IEEE Electron Device Letters 34(3):354~356
J. -G. Lee / 2012 / State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates / Applied Physics Express 5(6):066502
S. -W. Han / 2014 / Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal–oxide–semiconductor heterojunction field-effect transistor / Applied Physics Express 7(11):111002
O. Ambacher / 2000 / Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures / Journal of Applied Physics 87(1):334~344
B. -R. Park / 2013 / High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs / IEEE Electron Device Letters 34(3):354~356
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UCI(KEPA) : I410-ECN-0101-2017-569-001935134