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논문 기본 정보

자료유형
학술저널
저자정보
Raymond Gyaang (Hanbat National University) Dong-Ho Lee (Hanbat National University) Jusung Kim (Hanbat National University)
저널정보
한국전기전자학회 전기전자학회논문지 전기전자학회논문지 제23권 제3호
발행연도
2019.9
수록면
917 - 924 (8page)

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초록· 키워드

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This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An IIP₃ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.

목차

Abstract
Ⅰ. Introduction
Ⅱ. RF Front-End Architecture for CA Operation
Ⅲ. Design of the Proposed LNA
Ⅳ. Implementation and Layout Issues
Ⅴ. Simulation Results
Ⅵ. Conclusion
References

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