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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.3 No.1
- 발행연도
- 1999.4
- 수록면
- 33 - 37 (5page)
이용수
초록· 키워드
오류제보하기
We present, for the first time, a prototype active-matrix field emission display (AMFED) with 25×25 pixels in which polycrystalline silicon field emitter array (poly-Si FEA) and thin-film transistor (TFT) were monolithically integrated on an insulating substrate. The FEAs showed relatively large electron emissions above at a gate voltage of 50 V, and the TFTs were designed to have low off-state currents even though at high drain voltages. The integrated poly-Si TFT controlled electron emissions of the poly-Si FEA actively, resulting in improvement in the emission stability and reliability along with a low-voltage control of field emission below 25 V. With the prototype AMFED we have displayed character patterns by low-voltage peripheral circuits of 15 V in a high vacuum chamber.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experiments
Ⅲ. Results and Discussion
Ⅳ. Conclusion
Acknowledgements
References
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