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논문 기본 정보

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학술저널
저자정보
Shaivalini Singh (Yeungnam University) Pramod Kumar Tiwari (Indian Institute of Technology) Hemant Kumar (Indian Institute of Technology BHU) Yogesh Kumar (Indian Institute of Technology BHU) Gopal Rawat (Indian Institute of Technology BHU) Sanjay Kumar (Indian Institute of Technology BHU) Kunal Singh (Indian Institute of Technology BHU) Ekta Goel (Indian Institute of Technology BHU) S. Jit (Indian Institute of Technology BHU) 박시현 (영남대학교)
저널정보
성균관대학교 성균나노과학기술원 NANO NANO Vol.12 No.11
발행연도
2017.1
수록면
86 - 93 (8page)

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In this work, we report theoretical and experimental study of Pd/ZnO nanorod (NR) Schottky diodes-based ultraviolet photodetector (UV-PD). The ZnO-NRs are deposited on indium tin oxide (ITO) coated glass substrates by using a low-temperature hydrothermal method. The surface morphology of the ZnO-NRs film is characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The SEM image shows vertically grown NRs with uniformity, and XRD shows the preferred (002) orientation of ZnO-NR films. The current–voltage characteristics of Pd/ZnO-NR Schottky diodes are studied under dark and UV light. A voltage bias from -1V to +1V is applied and the ratio of photocurrent to dark current was ( ~0.17 x 10 2 at V = 0.5V) calculated from the I–V curve. The value of responsivity was found to be 0.111A/W at λ = 365 nm and at bias = 0.50 V. An approximated UV-PD structure has also been numerically simulated using three-dimensional (3D) device simulator from Visual TCAD of Cogenda International. The simulated I–V characteristics have also been plotted under both dark and light conditions. The simulated results are found to be following the nature of experimental results.

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