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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국정보통신학회JICCE Journal of information and communication convergence engineering Journal of information and communication convergence engineering Vol.14 No.1
- 발행연도
- 2016.3
- 수록면
- 35 - 39 (5page)
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초록· 키워드
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In this paper, we develop a 94-㎓ single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 ㎚ has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-㎓ single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 ㏈ at an RF frequency of 92.5 ㎓ to 95 ㎓ and an IF frequency of 500 ㎒ with an LO power of 7 ㏈m. The RF-to-LO isolation characteristics were greater than -32 ㏈. These values are considered to be attributed to superior Schottky diode characteristics.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. CHARACTERISTICS OF THE PLANAR SCHOTTKY DIODE
Ⅲ. PERFORMANCE OF THE 94 GHZ SINGLE BALANCED MIXER
Ⅳ. CONCLUSION
REFERENCES
참고문헌 (10)
참고문헌 신청
S. A. Maas, Microwave Mixers, 2nd ed. Boston, MA: Artech House, 1993.
C. Florian, F. Scappaviva, M. Feudale, V. A. Monaco, and F. Filicori, “A V band singly balanced diode mixer for space application,” in Proceedings of European Gallium Arsenide and Other Semiconductor Application Symposium (EGAAS2005), Paris, pp. 441-444, 2005.
Z. Y. Zhang, Y. R. Wei, and K. Wu, “Broadband millimeter-wave single balanced mixer and its applications to substrate integrated wireless systems,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 3, pp. 660-669, 2012.
U. V. Bhapkar and T. W. Crowe, “Analysis of the high frequency series impedance of GaAs Schottky diodes by a finite difference technique,” IEEE Transactions on Microwave Theory and Techniques, vol. 40, no. 5, pp. 886-894, 1992.
T. W. Crowe, W. C. B. Peatman, P. A. D. Wood, and X. Liu, “GaAs Schottky barrier diodes for THz applications,” in Proceedings of IEEE MTT-S International Microwave Symposium Digest, Albuquerque, NM, pp. 1141-1144, 1992.
C. Florian, F. Scappaviva, M. Feudale, V. A. Monaco, and F. Filicori, “A V band singly balanced diode mixer for space application,” in Proceedings of European Gallium Arsenide and Other Semiconductor Application Symposium (EGAAS2005), Paris, pp. 441-444, 2005.
Z. Y. Zhang, Y. R. Wei, and K. Wu, “Broadband millimeter-wave single balanced mixer and its applications to substrate integrated wireless systems,” IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 3, pp. 660-669, 2012.
U. V. Bhapkar and T. W. Crowe, “Analysis of the high frequency series impedance of GaAs Schottky diodes by a finite difference technique,” IEEE Transactions on Microwave Theory and Techniques, vol. 40, no. 5, pp. 886-894, 1992.
T. W. Crowe, W. C. B. Peatman, P. A. D. Wood, and X. Liu, “GaAs Schottky barrier diodes for THz applications,” in Proceedings of IEEE MTT-S International Microwave Symposium Digest, Albuquerque, NM, pp. 1141-1144, 1992.
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