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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.33 No.6
- 발행연도
- 2024.11
- 수록면
- 171 - 175 (5page)
이용수
초록· 키워드
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A key aspect in understanding silicon etching mechanisms is analyzing the characteristics of volatile reaction products, whose properties, par- ticularly stoichiometry, vary significantly with temperature and fluorine coverage. These variations influence crucial etching attributes, such as reaction kinetics and the transition from isotropic to anisotropic etching. Temperature and fluorine coverage thus emerge as the primary determinants of the stoichiometry and complexity of reaction products. At low temperatures, the Langmuir-Hinshelwood mechanism domi- nates, where bimolecular reactions between adsorbed species produce SiF₄ as the major product. As temperature increases, thermal desorption becomes the primary mechanism, favoring the formation of SiF₂ and SiF. Similarly, fluorine coverage influences reaction pathways: under low coverage, SiF₄ is predominant, while higher coverage leads to more complex intermediates such as Si2F6 and Si3F8 through bimolecular or trimolecular reactions involving SiF₃ and SiF₂.
목차
ABSTRACT
1. Introduction
2. Experimental details
3. Results and discussion
4. Conclusions
References
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