지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.15 No.5
- 발행연도
- 2015.10
- 수록면
- 526 - 532 (7page)
이용수
초록· 키워드
오류제보하기
We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS (V<SUB>GS</SUB>=13 V and V<SUB>DS</SUB>=13 V), the parallel shift of the transfer curve into a negative V<SUB>GS</SUB> direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (ΔV<SUB>T</SUB>), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ΔV<SUB>T</SUB> were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy (V<SUP>o2+</SUP>). In addition, it was also confirmed that the wider channel width corresponds with more negative DVT. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. DEVICE FABRICATION AND MEASUREMENT RESULTS
Ⅲ. DISCUSSION
Ⅳ. CONCLUSION
REFERENCES
참고문헌 (0)
참고문헌 신청함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
Quantitative Analysis of Channel Width Effects on Electrical Performance Degradation of Top-gate Self-aligned Coplanar IGZO Thin-film Transistors under Self-heating Stresses
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2023 .02
-
게이트 바이어스에 의한 a-IGZO 박막 트랜지스터 전기적 특성의 열화현상 분석
전기전자재료학회논문지
2021 .01
-
Comparative Analysis on Positive Bias Stress-Induced Instability under High VGS/Low VDS and Low VGS/High VDS in Amorphous InGaZnO Thin-Film Transistors
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2015 .10
-
a-IGZO TFT의 다양한 PBS 조건에 따른 신뢰성 분석
대한전자공학회 학술대회
2015 .06
-
Charge Trapping Mechanism in Amorphous Si-In-Zn-O Thin-Film Transistors During Positive Bias Stress Sang Yeol Lee† Department of Semiconductor Engineering, Cheongju University, Cheongju 28503, Korea Received July
Transactions on Electrical and Electronic Materials
2016 .01
-
Linearity Analysis of MoTe 2 -FET based Single Transistor AND Gate Using Non-Equilibrium Green’s Function
Transactions on Electrical and Electronic Materials
2022 .04
-
Electrolyte-gate Field-effect Transistor Based Biosensor Using Amorphous Oxide Semiconductor
한국고분자학회 학술대회 연구논문 초록집
2023 .10
-
Ambipolar Charge Transport in a Donor-Acceptor-Donor-type Conjugated Block Copolymer and Its Gate-Voltage-Controlled Thin Film Transistor Memory
한국고분자학회 학술대회 연구논문 초록집
2017 .04
-
Indium Gallium Zinc Oxide(IGZO) Thin-film transistor operation based on polarization effect of liquid crystals from a remote gate
한국표면공학회 학술발표회 초록집
2018 .06
-
TCAD를 통한 Transistor 설계 및 이온 농도에 따른 전기적 특성 평가
한국기계가공학회 춘추계학술대회 논문집
2021 .06
-
The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
한국고분자학회 학술대회 연구논문 초록집
2015 .04
-
Sub-2 V, p-/n- channel electrolyte gated transistors with hybrid perovskite gate insulator
한국고분자학회 학술대회 연구논문 초록집
2017 .10
-
Sub-2 V, p-/n- channel electrolyte gated transistors with hybrid perovskite gate insulator
한국표면공학회 학술발표회 초록집
2017 .11
-
A Combined Spectroscopic Investigation of Charge Trapping Mechanism In Polymer Semiconducotrs for High Operational Stablity of Polymer Field-Effect Transistors
한국고분자학회 학술대회 연구논문 초록집
2021 .10
-
Experimental Investigation of Physical Mechanism for Asymmetrical Degradation in Amorphous InGaZnO Thin-film Transistors under Simultaneous Gate and Drain Bias Stresses
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2017 .04
-
Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2022 .12
-
Characteristics of Gate Structure in Junctionless Double Gate Field Effect Transistors
대한전자공학회 학술대회
2019 .06
-
Design and Performance Analysis of Advanced MOSFET Structures
Transactions on Electrical and Electronic Materials
2022 .06
-
3nm급 Multi-Bridge Channel Field Effect Transistor의 Bottom Oxide 및 Package에 따른 Self-Heating 변화
대한전자공학회 학술대회
2021 .06
-
산화물 박막 소자의 단기 열화 특성 분석 및 예측식 모델링
전기학회논문지
2023 .03
이 논문의 저자 정보
최근 본 자료
댓글(0)
0
UCI(KEPA) : I410-ECN-0101-2016-569-002082810