High Quality Nickel Atomic Layer Deposition for Nanoscale Contact Applications

Kim, Woo-Hee; Lee, Han-Bo-Ram; Heo, Kwang; Hong, Seung-Hun; Kim, Hyung-Jun

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자료유형: 학술대회자료

저자정보: Kim, Woo-Hee (Department of Materials Science and Engineering, POSTECH [Pohang University of Science and Technology]) Lee, Han-Bo-Ram (Department of Materials Science and Engineering, POSTECH [Pohang University of Science and Technology]) Heo, Kwang (Department of Physics and Astronomy, Seoul National University) Hong, Seung-Hun (Department of Physics and Astronomy, Seoul National University) Kim, Hyung-Jun (Department of Materials Science and Engineering, POSTECH [Pohang University of Science and Technology])

저널정보: 한국재료학회 한국재료학회 학술발표대회 한국재료학회 2009년도 춘계학술발표대회

발행연도: 2009.1

수록면: 222 - 222 (1page)

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Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

#Nickel #Atomica Layer Deposition #Area-Selective Atomic Layer Depostion

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Kim, Woo-Hee

소속기관 Department of Materials Science and Engineering, POSTECH [Pohang University of Science and Technolog