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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.21 No.3
- 발행연도
- 2021.6
- 수록면
- 189 - 198 (10page)
- DOI
- 10.5573/JSTS.2021.21.3.189
이용수
초록· 키워드
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In this study, investigate the influence of oxygen plasma treatment on the oxide channel layer of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors based on the amount of oxygen gas injected. The a-IGZO channel layer thin-film transistors (TFTs) were fabricated with plasma treatment of zero, three, six, or nine standard cubic centimeters per minute (sccm) of oxygen gas injection into the a-IGZO channel layer using gun-type plasma cells from a molecular beam epitaxy system after the post-annealing process. In this experiment, oxygen plasma treatment on the a-IGZO channel layer improved the electrical and surface-area performance. Of all the treatment conditions, the a-IGZO channel layer TFT treated with plasma from an injection of 6 sccm of oxygen gas showed excellent transfer characteristics. They include saturation mobility of 14.4 cm²/Vs, a threshold voltage of 4.5 V, an on/off current ratio of 1.1 × 10<SUP>8</SUP>, and an inverse subthreshold slope of 0.7 V/dec. Surface morphology analyses confirmed that increases in the oxygen gas injection rate decreased. A dynamic inverter test was conducted by configuring the logic circuit for the a-IGZO channel layer TFT, which verified the possibility for future application of the backplane device in active-driven displays.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENT
III. RESULTS AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (41)
참고문헌 신청
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H. E. Lee, S. Kim, J. Ko, H.-I. Yeom, C.-W. Byun, S. H. Lee, D. J. Joe, T.-H. Im, S.-H. K. Park, and K. J. Lee, "Skin-Like Oxide Thin-Film Transistors for Transparent Displays," Adv. Funct. Mater., Vol. 26, No. 34, pp. 6170-6178, Jul. 2016.
S. R. Thomas, P. Pattanasattayavong, and T. D. Anthopoulos, "Solution-processable metal oxide semiconductors for thin-film transistor applications," Chem. Soc. Rev., Vol. 42, No. 16, pp. 6910-6923, Jun. 2013.
P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, "GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition," Appl. Phys. Lett., Vol. 83, No. 1, pp. 180-182, Jun. 2003.
W. Wu, L. Zhang, Z. Xu, L. Zhou, H. Tao, J. Zou, M. Xu, L. Wang, and J. Peng, "A High-Reliability Gate Driver Integrated in Flexible AMOLED Display by IZO TFTs," IEEE Trans. Electron Devices, Vol. 64, No. 5, pp. 1991-1996, May. 2017.
H. E. Lee, S. Kim, J. Ko, H.-I. Yeom, C.-W. Byun, S. H. Lee, D. J. Joe, T.-H. Im, S.-H. K. Park, and K. J. Lee, "Skin-Like Oxide Thin-Film Transistors for Transparent Displays," Adv. Funct. Mater., Vol. 26, No. 34, pp. 6170-6178, Jul. 2016.
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