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논문 기본 정보

자료유형
학술저널
저자정보
Lakshmi Narayana Thalluri (Andhra Loyola Institute of Engineering and Technology) Samuyelu Bommu (PVP Siddhartha Institute of Technology) Sathuluri Mallikharjuna Rao (Andhra Loyola Institute of Engineering and Technology) K. Srinivasa Rao (Koneru Lakshmaiah Educational Foundation (Deemed to be University)) Koushik Guha (National Institute of Technology) S. S. Kiran (Lendi Institute of Engineering and Technology)
저널정보
한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제23권 제5호
발행연도
2022.10
수록면
509 - 521 (13page)
DOI
https://doi.org/10.1007/s42341-021-00378-1

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In this paper, a target application-based design approach for RF MEMS switches using artifi cial neural networks (ANN) is presented. ANN approach is used to decide the dimensions of the RF MEMS switch for the targeted application. The ANN approach design and analysis is done using MATLAB. The results obtained by ANN method are validated using the FEM tool simulation, which show that the developed models have good accuracy over the range of switch dimension values for the intended application. The switch dimensions are extracted for L, S, C, X, Ku, K, and Ka-band applications using ANN. Eventually, a novel RF MEMS switch based on the ANN approach for C-band applications is proposed. The required pullin voltage will increase because of perforation, and this problem is handled by adding extra weight to the membrane with pillars and slabs. Analyzed load distribution in membrane with perforation. FEM design is implemented using solid mechanics and electrostatic-based Multi-physics in COMSOL environment. Diff erent studies, i.e., stationary, time-dependent, and frequency domain are performed to extract electrical, mechanical, and Radio Frequency parameters of the proposed design. The switch designed for C-band applications off ering an actuation voltage of 7.4 V, Insertion loss of − 0.2 dB, and Isolationloss of − 57 dB.

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