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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제23권 제4호
- 발행연도
- 2022.8
- 수록면
- 419 - 429 (11page)
- DOI
- https://doi.org/10.1007/s42341-021-00363-8
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초록· 키워드
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In this paper, a capacitive RF MEMS switch working in shunt confi guration is designed and optimized using FEM software. An electrostatically actuated fixed?fi xed type shunt switch is optimised for low pull-in voltage. The thickness of the membrane and the actuating gap is optimized for low pull-in voltage and high capacitance ratio. The effect of diff erent meanders, perforations, slits and device dimensions were also analyzed. The fi nal device has a pull-in voltage of 3.74 V, down capacitance of 28.6 pF, up capacitance of 160 fF and a capacitance ratio of 178.125. The switch shows peak isolation of 43.3 dB at 39.7 GHz and isolation better than 30 dB over the entire K a band.
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