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자료유형
학술저널
저자정보
저널정보
한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제20권 제4호
발행연도
2019.1
수록면
299 - 308 (10page)

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This paper presents the design of a MEMS shunt capacitive switch with fi xed–fi xed beam for high frequency RF applications. The switch dimensions were very carefully chosen to obtain the optimum performance of the switch when actuated with RF transmission line. The designed switch uses two diff erent structures: beam without perforations and beam with circular perforations with same switch dimensions. Spring constant of the switch with perforations shows reduction in requirement of actuation voltage due to signifi cant reduction in spring constant. Actuation voltage analysis was also done for two structures and the actuation voltage for switch with perforations found to be 6.80 V which is 35.23% less compare to switch without perforations (10.5 V). RF characteristics in terms of Insertion loss, return loss and isolation found to be − 0.05 dB, − 43 dB and − 12 dB without perforations and it was − 0.03 dB, − 48 dB and − 15.5 dB for the switch with perforations at 62 GHz frequency. The switch designed with circular perforations shows improvement in insertion loss, return loss and isolation by 20%, 15% and 24% respectively compare to switch without perforations. The switch can be used for V-band applications like satellite communications and RF applications.

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