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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.17 No.2
- 발행연도
- 2017.4
- 수록면
- 230 - 238 (9page)
이용수
초록· 키워드
오류제보하기
We have proposed an InGaAs-based gateall-around (GAA) tunneling field-effect transistor (TFET) with a stacked dual-metal gate (DMG). The electrical performances of the proposed TFET are evaluated through technology computer-aided design (TCAD) simulations. The simulation results show that the proposed TFET demonstrates improved DC performances including high on-state current (I<SUB>on</SUB>) and steep subthreshold swing (S), in comparison with a single-metal gate (SMG) TFET with higher gate metal workfunction, as it has a thinner sourcechannel tunneling barrier width by low workfunction of source-side channel gate. The effects of the gate workfunction on I<SUB>on</SUB>, the off-state current (I<SUB>off</SUB>), and S in the DMG-TFETs are examined. The DMG-TFETs with PNPN structure demonstrate outstanding DC performances and RF characteristics with a higher n-type doping concentration in the In<SUB>0.8</SUB>Ga<SUB>0.2</SUB>As source-side channel region.
목차
Abstract
I. INTRODUCTION
II. DEVICE STRUCTURE AND DESIGN
III. RESULTS AND DISCUSSION
IV. RF PERFORMANCES
V. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (19)
참고문헌 신청
A. S. Verhulst, W. G. Vandenberghe, K. Maex, and G. Groeseneken, “Tunnel field-effect transistor without gate-drain overlap,” Applied Physics Letters, Vol.91, No.5, pp.053102-1-053102-3, Jul., 2007.
Y. J. Yoon, J. H. Seo, S. Cho, H.-I. Kwon, J.-H. Lee, and I. M. Kang, “Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications,” Journal of Semiconductor Technology and Science, Vol.16, No.2, pp.172-178, April. 2016.
U. E. Avci, D. H. Morris, and I. A. Young, “Tunneling Field-Effect Transistors: Prospects and Challenges,” Journal of the Electron Devices Society, Vol.3, No.3, pp.88-95, May., 2015.
R. Iida, S.-H. Kim, M. Yokoyama, N. Taoka, S.-H. Lee, M. Takenaka, and S. Takagi, “High transconductance self-aligned gate-last surface channel In0.53Ga0.47As MOSFET,” Electron Devices Meeting, 2011. IEDM Technicla Digest. IEEE International, 5-7, pp.13.2.1-13.2.4, Dec., 2011.
R. Iida, S.-H. Kim, M. Yokoyama, N. Taoka, S.-H. Lee, M. Takenaka, and S. Takagi, “Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxidesemiconductor field-effect transistors,” Journal of Applied Physics, Vol.110, No.12, pp.124505-1-124505-8, Dec., 2011.
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