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In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field- Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating andthe high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthresholdswing of 80 mV/decade for drain voltage (VDS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, thesubthreshold swing at gate voltage (VGS) = threshold voltage (VT), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.
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참고문헌 (20)
참고문헌 신청
A. M. Ionescu / 2011 / Tunnel field-effect transistors as energy-efficient electronic switches / Nature 479(7373):329~337
A. C. Seabaugh / 2010 / Low-voltage tunnel transistors for beyond CMOS logic / Proc. IEEE 98(12):2095~2110
F. Mayer / 2008 / Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible tunnel FET performance / 2008 IEEE Int. Electron Devices Meet :1~5
A. Bowonder / 2008 / Low-voltage green transistor using ultra shallow junction and hetero-tunneling / Proc. IEEE Int. Workshop Junction Technol :93~96
K. Bhuwalka / 2004 / Vertical tunnel field-effect transistor / IEEE Trans. Electron Devices 51(2):279~282
A. C. Seabaugh / 2010 / Low-voltage tunnel transistors for beyond CMOS logic / Proc. IEEE 98(12):2095~2110
F. Mayer / 2008 / Impact of SOI, Si1-xGexOI and GeOI substrates on CMOS compatible tunnel FET performance / 2008 IEEE Int. Electron Devices Meet :1~5
A. Bowonder / 2008 / Low-voltage green transistor using ultra shallow junction and hetero-tunneling / Proc. IEEE Int. Workshop Junction Technol :93~96
K. Bhuwalka / 2004 / Vertical tunnel field-effect transistor / IEEE Trans. Electron Devices 51(2):279~282
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바이오 센서 적용을 위한 수직형 이중게이트 InGaAs TFET의 게이트 열화 현상 분석
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