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- 자료유형
- 학술저널
- 저자정보
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- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제5호
- 발행연도
- 2015.1
- 수록면
- 254 - 259 (6page)
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This paper reports the optimized mixed-signal performance of a high-voltage (HV) laterally double-diffused metaloxide- semiconductor (LDMOS) field-effect transistor (FET) with a dual gate oxide (DGOX). The fabricated device is based on the split-gate FET concept. In addition, the gate oxide on the source-side channel is thicker than that on the drain-side channel. The experiment results showed that the electrical characteristics are strongly dependent on the source-side channel length with a thick gate oxide. The digital and analog performances according to the source-side channel length of the DGOX LDMOS device were examined for circuit applications. The HV DGOX device with various source-side channel lengths showed reduced by maximum 37% on-resistance (RON) and 50% drain conductance (gds).
Therefore, the optimized mixed-signal performance of the HV DGOX device can be obtained when the source-side channel length with a thick gate oxide is shorter than half of the channel length.
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참고문헌 (20)
참고문헌 신청
/ 2008 / MEDICI - Synopsys, User manual, ver. A-2008.09, Synopsys
B. J. Baliga / 1996 / Power semiconductor devices / PWS
Constantin Bulucea / 2010 / Physics, Technology, and Modeling of Complementary Asymmetric MOSFETs / IEEE Transactions on Electron Devices 57 (10) : 2363 ~ 2380
F. Udrea / 2007 / State-of-the-art technologies and devices for high-voltage integrated circuits / IET Circuits, Devices & Systems 1 (5) : 357 ~
H. Chang / 2012 / / International symposium on power semiconductor devices & IC's 217
B. J. Baliga / 1996 / Power semiconductor devices / PWS
Constantin Bulucea / 2010 / Physics, Technology, and Modeling of Complementary Asymmetric MOSFETs / IEEE Transactions on Electron Devices 57 (10) : 2363 ~ 2380
F. Udrea / 2007 / State-of-the-art technologies and devices for high-voltage integrated circuits / IET Circuits, Devices & Systems 1 (5) : 357 ~
H. Chang / 2012 / / International symposium on power semiconductor devices & IC's 217
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