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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제16권 제6호
- 발행연도
- 2015.1
- 수록면
- 346 - 350 (5page)
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In this study, we carried out an investigation of the etch characteristics of TiO2 thin films and the selectivity of TiO2 to SiO2 in adaptive coupled C12/Ar plasma. The maximum etch rate of the TiO2 thin film was 136±5 nm/min at a gas mixing ratio of C12/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.
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참고문헌 (15)
참고문헌 신청
A. Le Gouil / 2007 / Poly-Si?TiN?HfO[sub 2] gate stack etching in high-density plasmas / Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structur
A.M. Efremov / 2004 / Simple Model for Ion-Assisted Etching Using<tex>$hboxCl_2hbox--hboxAr$</tex>Inductively Coupled Plasma: Effect of Gas Mixing Ratio / IEEE T
A.M. Efremov / 2007 / On the applicability of self-consistent global model for the characterization of Cl2/Ar inductively coupled plasma / Microelectronic Engineering 84 (1)
Chan-Soo Lee / 2011 / Effect of MIM and n-Well Capacitors on Programming Characteristics of EEPROM / Transactions on Electrical and Electronic Materials 12 (1) : 35 ~ 39
Gwan-Ha Kim / 2005 / Plasma etching of (Ba,Sr)TiO3 thin films using inductively coupled Cl2/Ar and BCl3/Cl2/Ar plasma / Thin Solid Films 475 (1-2) : 86 ~ 90
A.M. Efremov / 2004 / Simple Model for Ion-Assisted Etching Using<tex>$hboxCl_2hbox--hboxAr$</tex>Inductively Coupled Plasma: Effect of Gas Mixing Ratio / IEEE T
A.M. Efremov / 2007 / On the applicability of self-consistent global model for the characterization of Cl2/Ar inductively coupled plasma / Microelectronic Engineering 84 (1)
Chan-Soo Lee / 2011 / Effect of MIM and n-Well Capacitors on Programming Characteristics of EEPROM / Transactions on Electrical and Electronic Materials 12 (1) : 35 ~ 39
Gwan-Ha Kim / 2005 / Plasma etching of (Ba,Sr)TiO3 thin films using inductively coupled Cl2/Ar and BCl3/Cl2/Ar plasma / Thin Solid Films 475 (1-2) : 86 ~ 90
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