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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
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- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제17권 제6호
- 발행연도
- 2016.1
- 수록면
- 329 - 334 (6page)
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In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triplegate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator ATLAS™ wasused to construct, examine, and simulate the structure in three dimensions with different models. The drain current,transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electricalparameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance ofsome basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These resultsmight be useful for further development of devises to strongly down-scale the manufacturing process.
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참고문헌 (24)
참고문헌 신청
J. P. Collinge / 2008 / FinFET and Other Multi-Gate Transistors / Springer :339
N. Boukortt / 2016 / Electrical Characteristics of 8-nm SOI n-FinFETs / Silicon 8(4):497~503
Xuejue Huang / 2001 / Sub-50 nm P-channel FinFET / IEEE Transactions on Electron Devices 48(5):880~886
Romain Ritzenthaler / 2011 / 3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors / Solid-State Electronics 65-66:94~102
Giovanni Crupi / 2014 / Silicon-on-insulator MOSFETs models in analog/RF domain / International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 27(5-6):707~735
N. Boukortt / 2016 / Electrical Characteristics of 8-nm SOI n-FinFETs / Silicon 8(4):497~503
Xuejue Huang / 2001 / Sub-50 nm P-channel FinFET / IEEE Transactions on Electron Devices 48(5):880~886
Romain Ritzenthaler / 2011 / 3D analytical modelling of subthreshold characteristics in vertical Multiple-gate FinFET transistors / Solid-State Electronics 65-66:94~102
Giovanni Crupi / 2014 / Silicon-on-insulator MOSFETs models in analog/RF domain / International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 27(5-6):707~735
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