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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.2 No.2
- 발행연도
- 1998.10
- 수록면
- 122 - 132 (11page)
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초록· 키워드
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Characteristics of inductively coupled Cl₂/O₂ and Cl₂/N₂ plasmas and their effects on the formation of sub micron deep trench etching of single crystal silicon have been investigated using Langmuir probe, quadrupole mass spectrometer (QMS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM). Also, when silicon is etched with oxygen added chlorine plasmas, etch products recombined with oxygen such as SiCl_xO_y emerged and Si-O bondings were found on the etched silicon surface. However, when nitrogen is added to chlorine, no etch products recombined with nitrogen nor Si-N bondings were found on the etched silicon surface. When deep silicon trenches were etched, the characteristics of Cl₂/O₂ and Cl₂/N₂ plasmas changed the thickness of the sidewall residue (passivation layer) and the etch profile. Vertical deep submicron trench profiles having the aspect ratio higher than 5 could be obtained by controlling the thickness of the residue formed on the trench sidewall using Cl₂(O₂/N₂) plasmas.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental Methods
Ⅲ. Results and Discussion
Ⅳ. Conclusions
References
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