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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2007.1
- 수록면
- 15 - 18 (4page)
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Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.
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