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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전자파학회JEES Journal of Electromagnetic Engineering And Science Journal of Electromagnetic Engineering And Science Vol.16 No.1
- 발행연도
- 2016.1
- 수록면
- 44 - 51 (8page)
이용수
초록· 키워드
오류제보하기
A commercial 0.25 μm GaN process is used to implement 6–18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency (Fmax). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.
목차
Abstract
I. INTRODUCTION
II. LARGE-SIGNAL MODELING OF THE GAN HEMT
III. DESIGN OF A REACTIVE MATCHED GAN PA
IV. EXPERIMENTAL RESULTS
Ⅴ. CONCLUSION
REFERENCES
참고문헌 (17)
참고문헌 신청
[학술지(정기간행물)] - Y. M. Shin / 2012 / System design analysis of a 0.22-THz sheetbeam traveling-wave tube amplifier / IEEE Transactions on Electron Devices 59 (1) : 234 ~ 240
[단행본] - A. R. Gilmour / 1986 / Microwave Tubes / Artech House
[학술대회논문] - A. Katz / 2013 / GaN SSPA for UHF space applications / Proceedings of IEEE MTT-S International Microwave Symposium Digest : 1 ~ 4
[학술지(정기간행물)] - B. M. Green / 2001 / High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates / IEEE Transactions on Microwave Theory and Techniques 49 (12) : 2486 ~ 2491
[학술지(정기간행물)] - S. Nuttinck / 2001 / Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs / IEEE Transactions on Microwave Theory and Techniques 49 (12) : 2413 ~ 2420
[단행본] - A. R. Gilmour / 1986 / Microwave Tubes / Artech House
[학술대회논문] - A. Katz / 2013 / GaN SSPA for UHF space applications / Proceedings of IEEE MTT-S International Microwave Symposium Digest : 1 ~ 4
[학술지(정기간행물)] - B. M. Green / 2001 / High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates / IEEE Transactions on Microwave Theory and Techniques 49 (12) : 2486 ~ 2491
[학술지(정기간행물)] - S. Nuttinck / 2001 / Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs / IEEE Transactions on Microwave Theory and Techniques 49 (12) : 2413 ~ 2420
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