지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전자파학회JEES Journal of Electromagnetic Engineering And Science Journal of Electromagnetic Engineering And Science Vol.15 No.2
- 발행연도
- 2015.4
- 수록면
- 82 - 88 (7page)
이용수
초록· 키워드
오류제보하기
The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. LARGE SIGNAL SIMULATION OF GAN-HEMT
Ⅲ. DESIGN OF POWER AMPLIFIER
Ⅳ. MEASURED CHARACTERISTICS OF THE AMPLIFIER
Ⅴ. SYSTEM DESIGN OF THE MICROWAVE HEATING SYSTEM
Ⅵ. CONCLUSION
REFERENCES
참고문헌 (8)
참고문헌 신청
1. [학술대회논문] - A. Maekawa / 2006 / A 500 W push-pull AlGaN/GaN HEMT amplifier for Lband high power application / Proceedings of IEEE MTT-S International Microwave Symposium Digest : 722 ~ 725
2. [학술대회논문] - E. Mitani / 2007 / An 800-W AlGaN/GaN HEMT for S-band high-power application / Proceedings of CS Mantech Conference : 213 ~ 216
3. [학술대회논문] - H. Maehara / 2012 / Internally matched GaN FET at C-band with 220W output power and 56% power added efficiency / 2012Asia-Pacific Microwave Conference Proceedings (APMC) : 358 ~ 360
4. [학술대회논문] - H. Noto / 2012 / X-and Ku-band internally matched GaN amplifiers with more than 100W output power / Proceedings of the 7th European Microwave Integrated Circuits Conference (EuMIC) : 695 ~ 698
5. [학술지(정기간행물)] - D. Schmelzer / 2007 / A GaN HEMT class F amplifier at 2 GHz with > 80% PAE / IEEE Journal of Solid-State Circuits 42 (10) : 2130 ~ 2136
2. [학술대회논문] - E. Mitani / 2007 / An 800-W AlGaN/GaN HEMT for S-band high-power application / Proceedings of CS Mantech Conference : 213 ~ 216
3. [학술대회논문] - H. Maehara / 2012 / Internally matched GaN FET at C-band with 220W output power and 56% power added efficiency / 2012Asia-Pacific Microwave Conference Proceedings (APMC) : 358 ~ 360
4. [학술대회논문] - H. Noto / 2012 / X-and Ku-band internally matched GaN amplifiers with more than 100W output power / Proceedings of the 7th European Microwave Integrated Circuits Conference (EuMIC) : 695 ~ 698
5. [학술지(정기간행물)] - D. Schmelzer / 2007 / A GaN HEMT class F amplifier at 2 GHz with > 80% PAE / IEEE Journal of Solid-State Circuits 42 (10) : 2130 ~ 2136
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