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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국정보통신학회JICCE Journal of information and communication convergence engineering Journal of information and communication convergence engineering Vol.19 No.4
- 발행연도
- 2021.12
- 수록면
- 263 - 268 (6page)
이용수
이 논문의 연구 히스토리 (4)
2021
Compact Capacitance Model of L-Shape Tunnel Field-Effect Transistors for Circuit Simulation
Yun Seop Yu
,
Fa
,
az Najam
Journal of information and communication convergence engineering
2021.12
학술저널
Compact Capacitance Model of L-Shaped Tunneling Field-effect Transistors
Yun Seop Yu
,
Fa
,
az Najam
INTERNATIONAL CONFERENCE ON FUTURE INFORMATION & COMMUNICATION ENGINEERING
2021.02
학술대회자료
2017
Compact Current Model of Single-Gate/Double-Gate Tunneling Field-Effect Transistors
Yun Seop Yu
,
Fa
,
az Najam
Journal of Electrical Engineering & Technology
2017.09
학술저널
Capacitance model of Single-Gate Tunneling Field-Effect Transistors for Circuit Simulation
Yun Seop Yu
,
Hyung-Kun Pa
,
k
INTERNATIONAL CONFERENCE ON FUTURE INFORMATION & COMMUNICATION ENGINEERING
2017.06
학술대회자료
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초록· 키워드
오류제보하기
Although the compact capacitance model of point tunneling types of tunneling field-effect transistors (TFET) has been proposed, those of line tunneling types of TFETs have not been reported. In this study, a compact capacitance model of an L-shaped TFET (LTFET), a line tunneling type of TFET, is proposed using the previously developed surface potentials and current models of P-and L-type LTFETs. The Verilog-A LTFET model for simulation program with integrated circuit emphasis (SPICE) was also developed to verify the validation of the compact LTFET model including the capacitance model. The SPICE simulation results using the Verilog-A LTFET were compared to those obtained using a technology computer-aided-design (TCAD) device simulator. The current–voltage characteristics and capacitance–voltage characteristics of N and P-LTFETs were consistent for all operational bias. The voltage transfer characteristics and transient response of the inverter circuit comprising N and PLTFETs in series were verified with the TCAD mixed-mode simulation results.
목차
Abstract
I. INTRODUCTION
II. CAPACITANCE MODEL
III. MODEL VERIFICATION
IV. CONCLUSIONS
REFERENCES
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