지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술대회자료
- 저자정보
- 발행연도
- 2023.5
- 수록면
- 1,355 - 1,360 (6page)
이용수
초록· 키워드
오류제보하기
Nowadays, temperature monitoring has gained great focus to improve their reliability. For SiC MOSFETs, thermal sensitive electrical parameters (TSEP) are being widely investigated because of their ease of measurement and implementation. However, implementing such methods faces several critical problems, such as the ringing noise in the gate voltage waveform due to parasitic inductances and large output currents. This work proposes a gate voltage measurement method for inverter applications utilizing a zero-current switching (ZCS) period. We also propose slowing the gate switching speed during zero-current switching to obtain a stable gate voltage waveform for accurate estimation. We validate our proposed method by measuring the gate voltage waveforms of three commercial SiC devices through the double pulse test. Utilizing the plateau voltage, we demonstrate that temperature sensing can be performed within 5 % of error up to 100℃ temperature.
목차
Abstract
I. INTRODUCTION
II. PROPOSED ESTIMATION METHOD
III. SIMULATION RESULTS
IV. EXPERIMENTAL RESULTS
V. CONCLUSION
REFERENCES
참고문헌 (0)
참고문헌 신청함께 읽어보면 좋을 논문
논문 유사도에 따라 DBpia 가 추천하는 논문입니다. 함께 보면 좋을 연관 논문을 확인해보세요!
-
A Hybrid Current and Voltage-Source Gate Driver for Series-Connected SiC MOSFETs
ICPE(ISPE)논문집
2023 .05
-
Digital Gate Driver IC with Real-Time Gate Current Change by Sensing Drain Current to Cope with Operating Condition Variations of SiC MOSFET
ICPE(ISPE)논문집
2023 .05
-
Crosstalk Voltage Suppression of SiC MOSFET With An Auxiliary Bidirectional Switch
ICPE(ISPE)논문집
2023 .05
-
Aluminium Gate를 적용한 4H-SiC MOSFET의 Design parameter에 따른 전기적 특성 분석
전기전자학회논문지
2023 .12
-
낮은 입력 커패시턴스를 가지는 SiC-MOSFET을 위한 게이트 드라이버 설계
한국조명·전기설비학회 학술대회논문집
2021 .11
-
직렬 연결된 SiC MOSFET의 전압 평형을 위한 새로운 능동 게이트 구동 기법
전력전자학회논문지
2022 .02
-
A Simple Gate Driver Design for SiC MOSFET Paralleled Operation
ICPE(ISPE)논문집
2023 .05
-
High-Performance Driving of SiC MOSFETs to Implement Short-Time Operation for Inverter Circuits
ICPE(ISPE)논문집
2023 .05
-
Current Source Gate Drive Circuits with Low Power Consumption for High Frequency Power Converters
ICPE(ISPE)논문집
2015 .06
-
Exploring High-Temperature Reliability of 4H-SiC MOSFETs : A Comparative Study of High-K Gate Dielectric Materials
Transactions on Electrical and Electronic Materials
2024 .04
-
Turn-on Loss Reduction for High Voltage Power Stack Using Active Gate Driving Method
Journal of Electrical Engineering & Technology
2017 .03
-
1-MHz Isolated Bipolar Half-bridge GaN gate driver for SiC MOSFETs
ICPE(ISPE)논문집
2015 .06
-
SiC 적용 인버터의 Gate 구동 회로 성능 검토
항공우주시스템공학회 학술행사 논문집
2024 .10
-
Physical Analysis of Gate-Source Voltage Dependencies of Parasitic Capacitors, and Their Impacts on Switching Behavior of a Discrete Silicon-Carbide MOSFET
ICPE(ISPE)논문집
2019 .05
-
Challenges of Junction Temperature Sensing in SiC Power MOSFETs
ICPE(ISPE)논문집
2019 .05
-
SiC MOSFET Crosstalk Modelling with Suppression Considering Impacts of dv/dt and di/dt
ICPE(ISPE)논문집
2023 .05
-
Analysis of Electrical Characteristics Changes Due to Physical Parameter Variations in Dual-Gate Feedback Field Effect Transistor
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
2025 .02
-
Research on Optimization Design of High Efficient Low Noise SiC-MOSFETs Inverters
ICPE(ISPE)논문집
2015 .06
-
A Novel Gate Driver for Suppressing Overcurrent and Overvoltage of SiC MOSFET
ICPE(ISPE)논문집
2019 .05
-
Split-Gate가 적용된 1.2 ㎸급 SiC MOSFET의 항복특성 개선을 위한 설계
대한전기학회 학술대회 논문집
2024 .07
최근 본 자료
댓글(0)
0