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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.19 No.2
- 발행연도
- 2019.4
- 수록면
- 178 - 183 (6page)
- DOI
- 10.5573/JSTS.2019.19.2.178
이용수
초록· 키워드
오류제보하기
Xenon (Xe) flash lamps were applied to the annealing process of amorphous In–Ga–Zn–O (a-IGZO) semiconductor films at room temperature for different pulse repetition numbers, and the results were compared with the conventional annealing process. From the Hall measurement results, the a-IGZO films annealed using Xe flash lamps showed improvements in carrier mobilities similar to a-IGZO films annealed in a conventional vacuum furnace. The Xe flash lamp was also used in the annealing process in the fabrication of a-IGZO thin-film transistors (TFTs). The transfer characteristics of a-IGZO TFTs showed enhanced saturation field-effect mobilities, smaller subthreshold swing, threshold voltage shifts, and higher on–off ratios at higher pulse repetition numbers of the Xe flash lamp. These results showed that the Xe flash lamp has an annealing effect on amorphous oxide semiconductor electronic devices with higher productivities.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. EXPERIMENTAL DETAILS
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSIONS
REFERENCES
참고문헌 (12)
참고문헌 신청
K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide,” Science, vol. 300, no. 5623, pp. 1269-1272, Jun. 2003.
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
J.-K. Kim, S.-H. Jeong, S.-A. Oh, S.-J. Moon, K. Imura, T. Okada, T. Noguchi, E.-J. Yun, and B. S. Bae, “Electrical Characteristics of a-IGZO TFTs with SiO2 Gate Insulator Prepared by RF Sputtering,” J. Dis. Tech., vol. 12, no. 3, pp. 1301- 1305, Mar. 2016.
B. Loisel, B. Guenais, A. Poudoulec, and P. Henoc, “Flash lamp crystallization of amorphous silicon films on glass substrates,” Thin Solid Films, vol. 117, no. 2, pp. 117-123, Jul. 1984.
B. Pecz, L. Dobos, D. Panknin, W. Skorupa, C. Lioutas, and N. Vouroutzis Crystallization of amorphous-Si films by flash lamp annealing, Appl. Surf. Sci., vol. 242, no. 1-2, pp. 185-191, Mar. 2005.
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
J.-K. Kim, S.-H. Jeong, S.-A. Oh, S.-J. Moon, K. Imura, T. Okada, T. Noguchi, E.-J. Yun, and B. S. Bae, “Electrical Characteristics of a-IGZO TFTs with SiO2 Gate Insulator Prepared by RF Sputtering,” J. Dis. Tech., vol. 12, no. 3, pp. 1301- 1305, Mar. 2016.
B. Loisel, B. Guenais, A. Poudoulec, and P. Henoc, “Flash lamp crystallization of amorphous silicon films on glass substrates,” Thin Solid Films, vol. 117, no. 2, pp. 117-123, Jul. 1984.
B. Pecz, L. Dobos, D. Panknin, W. Skorupa, C. Lioutas, and N. Vouroutzis Crystallization of amorphous-Si films by flash lamp annealing, Appl. Surf. Sci., vol. 242, no. 1-2, pp. 185-191, Mar. 2005.
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