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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제5권 제3호
- 발행연도
- 2004.1
- 수록면
- 98 - 103 (6page)
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초록· 키워드
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The plasma properties in the facing target sputtering system during carbon nitride film deposition have been investigated. The ionized nitrogen species of the deposited films increased with increasing discharge current and were independent of the nitrogen pressure. The nitrogen content in the films did not vary significantly with the variation of nitrogen gas. The electron temperature was high close to that in the inter-cathode region, reduced as the electrons moved away from the most intense region of magnetic confinement and increased again outside this region. Calculations based on the film composition showed that the ion to carbon atom ratio at the substrate was about 50 and that the ratio between the ionized and neutral nitrogen molecules was about 0.25.
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참고문헌 (13)
참고문헌 신청
/ 1970. / Handbook of Thin Film Technology : 1 ~
/ 1978 / Thin Film Process : 178 ~
/ 1980. / Facing targets type of sputtering method for deposition of magnetic metal films at low temperature and high rate : 646 ~ 16
/ 1981. / Deposition of Co-Cr films for perpendicular magnetic recording by improved opposing targets sputtering : 3175 ~ 17
/ 1991. / Langmuir probe plasma diagnostics during TiNx deposition : 41 ~
/ 1978 / Thin Film Process : 178 ~
/ 1980. / Facing targets type of sputtering method for deposition of magnetic metal films at low temperature and high rate : 646 ~ 16
/ 1981. / Deposition of Co-Cr films for perpendicular magnetic recording by improved opposing targets sputtering : 3175 ~ 17
/ 1991. / Langmuir probe plasma diagnostics during TiNx deposition : 41 ~
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