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자료유형
학술대회자료
저자정보
Kwon, Jang-Yeon (Samsung Advanced Institute of Technology [SAIT]) Cho, Hans-S (Samsung Advanced Institute of Technology [SAIT]) Kim, Do-Young (Samsung Advanced Institute of Technology [SAIT]) Park, Kyung-Bae (Samsung Advanced Institute of Technology [SAIT]) Jung, Ji-Sim (Samsung Advanced Institute of Technology [SAIT]) Park, Young-Soo (Samsung Advanced Institute of Technology [SAIT]) Lee, Min-Chul (Seoul National University) Han, Min-Koo (Seoul National University) Noguchi, Takashi (Samsung Advanced Institute of Technology [SAIT], Sungkyunkwan University)
저널정보
한국정보디스플레이학회 한국정보디스플레이학회 International Meeting 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
발행연도
2004.1
수록면
957 - 961 (5page)

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In order to realize high performance thin film transistor (TFT) on plastic substrate, Si film was deposited on plastic substrate at 170$^{\circ}C$ by using inductivity coupled plasma chemical vapor deposition (ICPCVD). Hydrogen concentration in as-deposited Si film was 3.8% which is much lower than that in film prepared by using conventional plasma enhanced chemical vapor deposition (PECVD). Si film was deposited as micro crystalline phase rather than amorphous phase even at 170$^{\circ}C$ because of high density plasma. By step-by-step Excimer laser annealing, dehydrogenation and recrystallization of Si film were carried out simultaneously. With step-by-step annealing and optimization of underlayer structure, it has succeeded to achieve large grain size of 300nm by using ICPCVD. Base on these results, poly-Si TFT was fabricated on plastic substrate successfully, and it is sufficient to drive pixels of OLEDs, as well as LCDs.

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