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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제11권 제4호
- 발행연도
- 2010.1
- 수록면
- 166 - 169 (4page)
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In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the HfAlO3 thin film etch rate and the selectivity with SiO2. A maximum etch rate of 108.7 nm/min was obtained in Cl2 (3 sccm)/BCl3 (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of HfAlO3 to SiO2 reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the HfAlO3 thin film increased. As the process pressure increased, the etch rate of the HfAlO3 thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of HfAlO3 thin film follows the ion-assisted chemical etching.
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참고문헌 (11)
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