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The etch of (Na<SUB>0.5</SUB>K<SUB>0.5</SUB>)NbO₃ (NKN) thin film was performed in BCl₃/Cl₂/Ar inductively coupled plasma. It was found that the 1sccm addition BCl3 (5%) into Cl2/Ar plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 ㎚/min at BCl₃ (1 sccm)/Cl₂ (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior a s the bias power increases. The analysis of the narrow scan spectra o f XPS for both a s-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.
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2. 실험방법
3. 결과 및 검토
4. 결론
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