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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2007.1
- 수록면
- 846 - 851 (6page)
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초록· 키워드
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In this work, the etching characteristics of Ge2Sb2Te5(GST) thin films were investigated using an inductively coupled plasma (ICP) of Cl2/Ar gas mixture. To analyze the etching mechanism, an optical emission spectroscopy (OES) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out. The etch rate of the GST films decreased with decreasing Ar fraction. At the same time, high selective etch rate over SiO2 films was obtained and the selectivity over photoresist films decreased with increasing the Ar fraction. From XPS results, we found that Te halides were formed at the etching surface and Te halides limited the etch rate of the GST films.
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참고문헌 (14)
참고문헌 신청
B. Hyot / 2002 / Analysis of writing and erasing behaviours in phase change materials / Journal of Magnetic Materials 249 : 504 ~
D. W. Green / 1984 / Perry's chemical engineers' handbook, 6th ed / McGraw-Hill, Inc
H. Park / 2006 / Integrated ferroelectrics 80 : 207 ~
H. Y. Cheng / 2005 / Wet etching of Ge2Sb2Te5 films and switching properties of resultant phase change memory cells / Semicond. Sci. Technol. 20 : 1111 ~
H. Y. Cheng / 2005 / Wet-etching characteristics of Ge2Sb2Te5 thin films for phase-change memory / IEEE Transactions on Magnetics 41 : 1031 ~
D. W. Green / 1984 / Perry's chemical engineers' handbook, 6th ed / McGraw-Hill, Inc
H. Park / 2006 / Integrated ferroelectrics 80 : 207 ~
H. Y. Cheng / 2005 / Wet etching of Ge2Sb2Te5 films and switching properties of resultant phase change memory cells / Semicond. Sci. Technol. 20 : 1111 ~
H. Y. Cheng / 2005 / Wet-etching characteristics of Ge2Sb2Te5 thin films for phase-change memory / IEEE Transactions on Magnetics 41 : 1031 ~
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